07/12/2018
European Research Council
Science 4 Refugees

PhD in neuromorphic engineering / emerging memory fabrication and characterization


  • ORGANISATION/COMPANY
    IEMN
  • RESEARCH FIELD
    EngineeringElectrical engineering
  • RESEARCHER PROFILE
    First Stage Researcher (R1)
  • APPLICATION DEADLINE
    31/01/2019 12:00 - Europe/Athens
  • LOCATION
    Canada › Sherbrooke
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Full-time
  • HOURS PER WEEK
    36
  • OFFER STARTING DATE
    01/02/2019
  • EU RESEARCH FRAMEWORK PROGRAMME
    H2020 / ERC

Key words:

3D monolithic integration, back-end-of-line, analog resistive memories, memristive devices, nanofabrication, neuromorphic engineering, machine learning

Summary:

ICT technologies are experiencing today strong mutations that should revolutionize our interaction with electronic devices. In particular, neuromorphic engineering approaches (i.e. material implementation of bio-inspired electronic circuit and artificial neural networks algorithms) are expected as key enabling technologies for the future of data processing. For instance, these technologies could couple low power performances, robustness and versatility for tasks ranging from image and speech recognition to brain-machine interfaces.

In the framework of the ERC-funded project IONOS (PI: F. Alibart), we aim at bringing neuromorphic circuits concepts based on co-integration of memory devices with CMOS to a maturity level that will enable demonstration of new concepts of interfaces between electronic and biological neural networks.

More precisely, our neuromorphic platform will take advantage of memristive technologies developed previously and will demonstrate their integration in the Back End Of Line (BEOL) of CMOS. Such monolithic integration of resistive memories on CMOS for bio-inspired computing will require mastering of the memristive technology, development of an efficient fabrication process flow for CMOS co-integration and exploration of new neuromorphic concepts.

The main objective of the PhD student will be to deliver a working chip with memory technologies integrated in the BEOL of a CMOS chip. This will require intensive work in cleanroom for memory devices fabrication and development of a CMOS compatible process flow. The candidate will be also in charge of electrical characterization and development of the control interface for neuromorphic functions demonstration. The PhD candidate will benefit from strong expertise from LN2-3IT in BEOL integration and packaging. The CMOS chip design will be realized in the consortium of the project in collaboration with the candidate. While most of the PhD will be realized at LN2-3IT (University of Sherbrooke), visit to IEMN-CNRS (France) are expected.

The candidate should have relevant training in the area of micro and nanotechnologies, material sciences or electrical engineering. Experience in cleanroom and electrical characterization is an asset. Overall, the candidate should demonstrate strong academic achievements and interest in fabrication and process development.

Application should be send to:

Fabien Alibart, Dominique Drouin and Serge Ecoffey

Fabien.alibart@iemn.univ-lille1.fr

Dominique.Drouin@USherbrooke.ca, Serge.ecoffey@USherbrooke.ca

CV, cover letter, academic track record and 2 references

LN2-3IT is a join laboratory between France and Canada. It offers strong interaction with academic partners in Canada (Univ. of Toronto, for example) but also with industrial partners (IBM-Bromont, C2MI). As a join laboratory, LN2-3IT offers also strong connection with CNRS labs located in France. The PhD thesis will be mostly pursued at LN2-3IT but will be also strongly involved in the research network of the IONOS project (IEMN-CNRS).

For more details see:

https://www.usherbrooke.ca/ln2/fr/

https://www.iemn.fr/

 

 

 

Additional comments

LN2-3IT is a join laboratory between France and Canada. It offers strong interaction with academic partners in Canada (Univ. of Toronto, for example) but also with industrial partners (IBM-Bromont, C2MI). As a join laboratory, LN2-3IT offers also strong connection with CNRS labs located in France. The PhD thesis will be mostly pursued at LN2-3IT but will be also strongly involved in the research network of the IONOS project (IEMN-CNRS).

For more details see:

https://www.usherbrooke.ca/ln2/fr/

https://www.iemn.fr/

Offer Requirements

Skills/Qualifications

The candidate should have relevant training in the area of micro and nanotechnologies, material sciences or electrical engineering. Experience in cleanroom and electrical characterization is an asset. Overall, the candidate should demonstrate strong academic achievements and interest in fabrication and process development.

 

Map Information

Job Work Location Personal Assistance locations
Work location(s)
1 position(s) available at
LN2-CNRS
Canada
QC
Sherbrooke

EURAXESS offer ID: 361911